Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiProduct Type
JFET
Sub Type
N-Channel Switch
Channel Type
Type N
Maximum Drain Source Voltage Vds
15V
Configuration
Single
Montare
Surface
Tip pachet
SOT-23
Maximum Power Dissipation Pd
350mW
Maximum Gate Source Voltage Vgs
-35 V
Numar pini
3
Frecventa minima de auto-rezonanta
-55°C
Maximum Drain Source Resistance Rds
30Ω
Drain Source Current Ids
20 mA
Temperatura maxima de lucru
150°C
Latime
1.3 mm
Inaltime
1.04mm
Lungime
2.9mm
Standards/Approvals
No
Automotive Standard
No
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Informatii despre stoc temporar indisponibile
€ 130,00
€ 0,26 Buc. (Livrat pe rola) (fara TVA)
€ 157,30
€ 0,315 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
500
€ 130,00
€ 0,26 Buc. (Livrat pe rola) (fara TVA)
€ 157,30
€ 0,315 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
500
| Cantitate | Pret unitar | Per Rola |
|---|---|---|
| 500 - 950 | € 0,26 | € 13,00 |
| 1000+ | € 0,23 | € 11,50 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiProduct Type
JFET
Sub Type
N-Channel Switch
Channel Type
Type N
Maximum Drain Source Voltage Vds
15V
Configuration
Single
Montare
Surface
Tip pachet
SOT-23
Maximum Power Dissipation Pd
350mW
Maximum Gate Source Voltage Vgs
-35 V
Numar pini
3
Frecventa minima de auto-rezonanta
-55°C
Maximum Drain Source Resistance Rds
30Ω
Drain Source Current Ids
20 mA
Temperatura maxima de lucru
150°C
Latime
1.3 mm
Inaltime
1.04mm
Lungime
2.9mm
Standards/Approvals
No
Automotive Standard
No
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


