Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
5 to 30mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
30V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
100 Ω
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Drain Gate On-Capacitance
14pF
Source Gate On-Capacitance
14pF
Dimensiuni
3.04 x 1.4 x 1.01mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Inaltime
1.01mm
Latime
1.4mm
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 110,00
€ 0,22 Buc. (Livrat pe rola) (fara TVA)
€ 130,90
€ 0,262 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
500
€ 110,00
€ 0,22 Buc. (Livrat pe rola) (fara TVA)
€ 130,90
€ 0,262 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
500
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Rola |
---|---|---|
500 - 950 | € 0,22 | € 11,00 |
1000+ | € 0,19 | € 9,50 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
5 to 30mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
30V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
100 Ω
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Drain Gate On-Capacitance
14pF
Source Gate On-Capacitance
14pF
Dimensiuni
3.04 x 1.4 x 1.01mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Inaltime
1.01mm
Latime
1.4mm
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.