Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
5 to 30mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
30V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
100 Ω
Timp montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Drain Gate On-Capacitance
14pF
Source Gate On-Capacitance
14pF
Dimensiuni
3.04 x 1.4 x 1.01mm
Inaltime
1.01mm
Latime
1.4mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Buc. (Pe o rola de 3000) (fara TVA)
€ 0,119
Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 0,10
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,119
Buc. (Pe o rola de 3000) (cu TVA)
3000
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
5 to 30mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
30V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
100 Ω
Timp montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Drain Gate On-Capacitance
14pF
Source Gate On-Capacitance
14pF
Dimensiuni
3.04 x 1.4 x 1.01mm
Inaltime
1.01mm
Latime
1.4mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.