Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
50 to 150mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
30V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
30 Ω
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Dimensiuni
2.9 x 1.3 x 0.94mm
Frecventa minima de auto-rezonanta
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Inaltime
0.94mm
Latime
1.3mm
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Buc. (Livrat pe rola) (fara TVA)
€ 0,464
Buc. (Livrat pe rola) (cu TVA)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
5 - 45 | € 0,39 | € 1,95 |
50 - 95 | € 0,36 | € 1,80 |
100 - 245 | € 0,30 | € 1,50 |
250 - 495 | € 0,28 | € 1,40 |
500+ | € 0,25 | € 1,25 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
50 to 150mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
30V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
30 Ω
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Dimensiuni
2.9 x 1.3 x 0.94mm
Frecventa minima de auto-rezonanta
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Inaltime
0.94mm
Latime
1.3mm
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.