Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 8mA
Maximum Drain Source Voltage
0.2 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
80 Ω
Timp montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Dimensiuni
2.92 x 1.3 x 0.93mm
Inaltime
0.93mm
Latime
1.3mm
Frecventa minima de auto-rezonanta
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
2.92mm
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 420,00
€ 0,14 Buc. (Pe o rola de 3000) (fara TVA)
€ 508,20
€ 0,169 Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 420,00
€ 0,14 Buc. (Pe o rola de 3000) (fara TVA)
€ 508,20
€ 0,169 Buc. (Pe o rola de 3000) (cu TVA)
Informatii despre stoc temporar indisponibile
3000
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 8mA
Maximum Drain Source Voltage
0.2 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
80 Ω
Timp montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Dimensiuni
2.92 x 1.3 x 0.93mm
Inaltime
0.93mm
Latime
1.3mm
Frecventa minima de auto-rezonanta
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
2.92mm
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


