Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
500 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
225 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Latime
1.3mm
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.94mm
Detalii produs
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,26
Buc. (Intr-un pachet de 10) (fara TVA)
€ 0,309
Buc. (Intr-un pachet de 10) (cu TVA)
10
€ 0,26
Buc. (Intr-un pachet de 10) (fara TVA)
€ 0,309
Buc. (Intr-un pachet de 10) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 90 | € 0,26 | € 2,60 |
100 - 190 | € 0,24 | € 2,40 |
200 - 740 | € 0,20 | € 2,00 |
750 - 1490 | € 0,19 | € 1,90 |
1500+ | € 0,17 | € 1,70 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
500 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
225 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Latime
1.3mm
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.94mm
Detalii produs