Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
10 A dc
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
100
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
3 V dc
Inaltime
16.12mm
Latime
4.9mm
Maximum Power Dissipation
40 W
Frecventa minima de auto-rezonanta
-65 °C
Dimensiuni
10.63 x 4.9 x 16.12mm
Temperatura maxima de lucru
+150 °C
Lungime
10.63mm
Tara de origine
Korea, Republic Of
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€ 1,54
Each (In a Tube of 50) (fara TVA)
€ 1,833
Each (In a Tube of 50) (cu TVA)
50
€ 1,54
Each (In a Tube of 50) (fara TVA)
€ 1,833
Each (In a Tube of 50) (cu TVA)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 50 | € 1,54 | € 77,00 |
100 - 200 | € 1,21 | € 60,50 |
250 - 450 | € 1,17 | € 58,50 |
500+ | € 1,01 | € 50,50 |
Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
10 A dc
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
100
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
3 V dc
Inaltime
16.12mm
Latime
4.9mm
Maximum Power Dissipation
40 W
Frecventa minima de auto-rezonanta
-65 °C
Dimensiuni
10.63 x 4.9 x 16.12mm
Temperatura maxima de lucru
+150 °C
Lungime
10.63mm
Tara de origine
Korea, Republic Of