Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
100 V
Tip pachet
IPAK (TO-251)
Montare
Through Hole
Maximum Power Dissipation
15 W
Minimum DC Current Gain
10
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
6.73 x 2.38 x 6.22mm
Detalii produs
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
Impachetare pentru productie (Tub)
15
P.O.A.
Impachetare pentru productie (Tub)
15
Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
100 V
Tip pachet
IPAK (TO-251)
Montare
Through Hole
Maximum Power Dissipation
15 W
Minimum DC Current Gain
10
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
6.73 x 2.38 x 6.22mm
Detalii produs
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.