Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
120 V
Maximum Emitter Base Voltage
5 V
Tip pachet
TO-204
Montare
Through Hole
Numar pini
2
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
400
Maximum Base Emitter Saturation Voltage
4.5 V
Maximum Collector Base Voltage
120 V
Maximum Collector Emitter Saturation Voltage
3.5 V
Inaltime
8.51mm
Latime
26.67mm
Maximum Power Dissipation
300 W
Frecventa minima de auto-rezonanta
-55 °C
Dimensiuni
38.86 x 26.67 x 8.51mm
Temperatura maxima de lucru
+200 °C
Lungime
38.86mm
Tara de origine
Mexico
Detalii produs
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 10,80
Each (In a Tray of 100) (fara TVA)
€ 12,852
Each (In a Tray of 100) (cu TVA)
100
€ 10,80
Each (In a Tray of 100) (fara TVA)
€ 12,852
Each (In a Tray of 100) (cu TVA)
100
Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
120 V
Maximum Emitter Base Voltage
5 V
Tip pachet
TO-204
Montare
Through Hole
Numar pini
2
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
400
Maximum Base Emitter Saturation Voltage
4.5 V
Maximum Collector Base Voltage
120 V
Maximum Collector Emitter Saturation Voltage
3.5 V
Inaltime
8.51mm
Latime
26.67mm
Maximum Power Dissipation
300 W
Frecventa minima de auto-rezonanta
-55 °C
Dimensiuni
38.86 x 26.67 x 8.51mm
Temperatura maxima de lucru
+200 °C
Lungime
38.86mm
Tara de origine
Mexico
Detalii produs
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.