Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
50 V
Maximum Emitter Base Voltage
30 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
16
Transistor Configuration
Common Emitter
Number of Elements per Chip
5
Minimum DC Current Gain
1000
Maximum Collector Emitter Saturation Voltage
1.6 V
Lungime
10mm
Inaltime
1.5mm
Latime
4mm
Temperatura minima de lucru
-40 °C
Dimensiuni
10 x 4 x 1.5mm
Temperatura maxima de lucru
+85 °C
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P.O.A.
48
P.O.A.
48
Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
50 V
Maximum Emitter Base Voltage
30 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
16
Transistor Configuration
Common Emitter
Number of Elements per Chip
5
Minimum DC Current Gain
1000
Maximum Collector Emitter Saturation Voltage
1.6 V
Lungime
10mm
Inaltime
1.5mm
Latime
4mm
Temperatura minima de lucru
-40 °C
Dimensiuni
10 x 4 x 1.5mm
Temperatura maxima de lucru
+85 °C