Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
50 V
Maximum Emitter Base Voltage
30 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
16
Transistor Configuration
Common Emitter
Number of Elements per Chip
5
Minimum DC Current Gain
1000
Maximum Collector Emitter Saturation Voltage
1.6 V
Lungime
10mm
Inaltime
1.5mm
Latime
4mm
Temperatura minima de lucru
-40 °C
Dimensiuni
10 x 4 x 1.5mm
Temperatura maxima de lucru
+85 °C
P.O.A.
Each (In a Tube of 48) (fara TVA)
48
P.O.A.
Each (In a Tube of 48) (fara TVA)
Informatii despre stoc temporar indisponibile
48
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
50 V
Maximum Emitter Base Voltage
30 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
16
Transistor Configuration
Common Emitter
Number of Elements per Chip
5
Minimum DC Current Gain
1000
Maximum Collector Emitter Saturation Voltage
1.6 V
Lungime
10mm
Inaltime
1.5mm
Latime
4mm
Temperatura minima de lucru
-40 °C
Dimensiuni
10 x 4 x 1.5mm
Temperatura maxima de lucru
+85 °C


