Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
300 V
Tip pachet
TO-92
Montare
Through Hole
Maximum Power Dissipation
625 mW
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Collector Base Voltage
300 V
Maximum Emitter Base Voltage
6 V
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
4.58 x 3.86 x 4.58mm
Tara de origine
China
Detalii produs
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
€ 2,30
€ 0,23 Buc. (Intr-un pachet de 10) (fara TVA)
€ 2,74
€ 0,274 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 2,30
€ 0,23 Buc. (Intr-un pachet de 10) (fara TVA)
€ 2,74
€ 0,274 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 90 | € 0,23 | € 2,30 |
100 - 240 | € 0,11 | € 1,10 |
250+ | € 0,10 | € 1,00 |
Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
300 V
Tip pachet
TO-92
Montare
Through Hole
Maximum Power Dissipation
625 mW
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Collector Base Voltage
300 V
Maximum Emitter Base Voltage
6 V
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
4.58 x 3.86 x 4.58mm
Tara de origine
China
Detalii produs
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.