Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
1.5 A
Maximum Collector Emitter Voltage
400 V
Tip pachet
TO-126
Timp montare
Through Hole
Maximum Power Dissipation
20 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
8 x 3.25 x 11mm
Tara de origine
Philippines
Detalii produs
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
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Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
1.5 A
Maximum Collector Emitter Voltage
400 V
Tip pachet
TO-126
Timp montare
Through Hole
Maximum Power Dissipation
20 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
8 x 3.25 x 11mm
Tara de origine
Philippines
Detalii produs
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.