Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 2mA
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
100 Ω
Montare
Through Hole
Tip pachet
TO-92
Numar pini
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensiuni
5.2 x 4.19 x 5.33mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
5.2mm
Inaltime
5.33mm
Latime
4.19mm
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,25
Each (Supplied in a Box) (fara TVA)
€ 0,298
Each (Supplied in a Box) (cu TVA)
Impachetare pentru productie (Cutie)
500
€ 0,25
Each (Supplied in a Box) (fara TVA)
€ 0,298
Each (Supplied in a Box) (cu TVA)
Impachetare pentru productie (Cutie)
500
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 2mA
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
100 Ω
Montare
Through Hole
Tip pachet
TO-92
Numar pini
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensiuni
5.2 x 4.19 x 5.33mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
5.2mm
Inaltime
5.33mm
Latime
4.19mm
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.