Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 2mA
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
100 Ω
Montare
Through Hole
Tip pachet
TO-92
Numar pini
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensiuni
5.2 x 4.19 x 5.33mm
Frecventa minima de auto-rezonanta
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
5.2mm
Inaltime
5.33mm
Latime
4.19mm
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Incercati din nou mai tarziu
€ 0,41
Buc. (Intr-un pachet de 50) (fara TVA)
€ 0,488
Buc. (Intr-un pachet de 50) (cu TVA)
50
€ 0,41
Buc. (Intr-un pachet de 50) (fara TVA)
€ 0,488
Buc. (Intr-un pachet de 50) (cu TVA)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
50 - 200 | € 0,41 | € 20,50 |
250 - 450 | € 0,24 | € 12,00 |
500 - 2450 | € 0,23 | € 11,50 |
2500 - 4950 | € 0,22 | € 11,00 |
5000+ | € 0,21 | € 10,50 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 2mA
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
100 Ω
Montare
Through Hole
Tip pachet
TO-92
Numar pini
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensiuni
5.2 x 4.19 x 5.33mm
Frecventa minima de auto-rezonanta
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
5.2mm
Inaltime
5.33mm
Latime
4.19mm
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.