Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 20mA
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
30 Ω
Montare
Through Hole
Tip pachet
TO-92
Numar pini
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensiuni
5.2 x 4.19 x 5.33mm
Inaltime
5.33mm
Latime
4.19mm
Frecventa minima de auto-rezonanta
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
5.2mm
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Incercati din nou mai tarziu
€ 0,09
Buc. (Intr-o punga de 10000) (fara TVA)
€ 0,107
Buc. (Intr-o punga de 10000) (cu TVA)
10000
€ 0,09
Buc. (Intr-o punga de 10000) (fara TVA)
€ 0,107
Buc. (Intr-o punga de 10000) (cu TVA)
10000
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 20mA
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
30 Ω
Montare
Through Hole
Tip pachet
TO-92
Numar pini
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensiuni
5.2 x 4.19 x 5.33mm
Inaltime
5.33mm
Latime
4.19mm
Frecventa minima de auto-rezonanta
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
5.2mm
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.