Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 40mA
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
12 Ω
Montare
Through Hole
Tip pachet
TO-92
Numar pini
3
Drain Gate On-Capacitance
85pF
Source Gate On-Capacitance
85pF
Dimensiuni
4.58 x 3.86 x 4.58mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
4.58mm
Inaltime
4.58mm
Latime
3.86mm
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Buc. (Intr-un pachet de 25) (cu TVA)
Standard
25
€ 0,44
Buc. (Intr-un pachet de 25) (fara TVA)
€ 0,524
Buc. (Intr-un pachet de 25) (cu TVA)
Standard
25
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
25 - 75 | € 0,44 | € 11,00 |
100 - 225 | € 0,36 | € 9,00 |
250 - 475 | € 0,31 | € 7,75 |
500+ | € 0,27 | € 6,75 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 40mA
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
12 Ω
Montare
Through Hole
Tip pachet
TO-92
Numar pini
3
Drain Gate On-Capacitance
85pF
Source Gate On-Capacitance
85pF
Dimensiuni
4.58 x 3.86 x 4.58mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
4.58mm
Inaltime
4.58mm
Latime
3.86mm
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.