Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
55 V
Tip pachet
TO-247
Dimensiune celula
UltraFET
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
285 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+175 °C
Lungime
15.87mm
Typical Gate Charge @ Vgs
175 nC @ 20 V
Latime
4.82mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
20.82mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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Incercati din nou mai tarziu
€ 3,54
Buc. (Intr-un pachet de 2) (fara TVA)
€ 4,213
Buc. (Intr-un pachet de 2) (cu TVA)
2
€ 3,54
Buc. (Intr-un pachet de 2) (fara TVA)
€ 4,213
Buc. (Intr-un pachet de 2) (cu TVA)
2
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
2 - 8 | € 3,54 | € 7,08 |
10 - 98 | € 2,93 | € 5,86 |
100 - 248 | € 2,34 | € 4,68 |
250 - 498 | € 2,26 | € 4,52 |
500+ | € 2,06 | € 4,12 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
55 V
Tip pachet
TO-247
Dimensiune celula
UltraFET
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
285 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+175 °C
Lungime
15.87mm
Typical Gate Charge @ Vgs
175 nC @ 20 V
Latime
4.82mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
20.82mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.