Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
800 V
Tip pachet
TO-220F
Timp montare
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
15, 20
Transistor Configuration
Single
Maximum Collector Base Voltage
1100 V
Maximum Emitter Base Voltage
7 V
Maximum Operating Frequency
15 MHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
10.16 x 4.7 x 15.87mm
Detalii produs
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
P.O.A.
Each (In a Tube of 50) (fara TVA)
50
P.O.A.
Each (In a Tube of 50) (fara TVA)
Informatii despre stoc temporar indisponibile
50
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
800 V
Tip pachet
TO-220F
Timp montare
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
15, 20
Transistor Configuration
Single
Maximum Collector Base Voltage
1100 V
Maximum Emitter Base Voltage
7 V
Maximum Operating Frequency
15 MHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
10.16 x 4.7 x 15.87mm
Detalii produs
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.


