Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiTransistor Type
PNP
Maximum DC Collector Current
-17 A
Maximum Collector Emitter Voltage
-250 V
Tip pachet
TO-3P
Timp montare
Through Hole
Maximum Power Dissipation
130 W
Minimum DC Current Gain
80
Transistor Configuration
Single
Maximum Collector Base Voltage
-250 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
30 MHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
15.6 x 4.8 x 19.9mm
Detalii produs
Power PNP Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
P.O.A.
Buc. (Intr-un pachet de 5) (fara TVA)
Standard
5
P.O.A.
Buc. (Intr-un pachet de 5) (fara TVA)
Informatii despre stoc temporar indisponibile
Standard
5
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiTransistor Type
PNP
Maximum DC Collector Current
-17 A
Maximum Collector Emitter Voltage
-250 V
Tip pachet
TO-3P
Timp montare
Through Hole
Maximum Power Dissipation
130 W
Minimum DC Current Gain
80
Transistor Configuration
Single
Maximum Collector Base Voltage
-250 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
30 MHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
15.6 x 4.8 x 19.9mm
Detalii produs
Power PNP Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.


