Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
400 V
Tip pachet
TO-3P
Montare
Through Hole
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
15.8 x 5 x 20.1mm
Temperatura maxima de lucru
+150 °C
Detalii produs
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
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P.O.A.
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P.O.A.
30
Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
400 V
Tip pachet
TO-3P
Montare
Through Hole
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
15.8 x 5 x 20.1mm
Temperatura maxima de lucru
+150 °C
Detalii produs
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.