Documente tehnice
Specificatii
Marca
onsemiMaximum Collector Emitter Voltage
950 V
Maximum Power Dissipation
434 W
Tip pachet
TO-247
Montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Dimensiuni
15.87 x 4.82 x 20.82mm
Temperatura maxima de lucru
+175 °C
Temperatura minima de lucru
-55 °C
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Informatii indisponibile despre stoc
P.O.A.
onsemi FGY75T95SQDTOS IGBT 950 V, 3-Pin TO-247, Through Hole
30
P.O.A.
onsemi FGY75T95SQDTOS IGBT 950 V, 3-Pin TO-247, Through Hole
Informatii indisponibile despre stoc
30
Documente tehnice
Specificatii
Marca
onsemiMaximum Collector Emitter Voltage
950 V
Maximum Power Dissipation
434 W
Tip pachet
TO-247
Montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Dimensiuni
15.87 x 4.82 x 20.82mm
Temperatura maxima de lucru
+175 °C
Temperatura minima de lucru
-55 °C