Documente tehnice
Specificatii
Marca
onsemiMaximum Continuous Collector Current
200 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
375 W
Number of Transistors
1
Tip pachet
TO-247
Timp montare
Through Hole
Channel Type
P
Numar pini
4
Switching Speed
1MHz
Transistor Configuration
Single
Dimensiuni
15.8 x 5.2 x 22.74mm
Temperatura minima de lucru
-55 °C
Gate Capacitance
5100pF
Temperatura maxima de lucru
+175 °C
Energy Rating
160mJ
Tara de origine
China
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Documente tehnice
Specificatii
Marca
onsemiMaximum Continuous Collector Current
200 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
375 W
Number of Transistors
1
Tip pachet
TO-247
Timp montare
Through Hole
Channel Type
P
Numar pini
4
Switching Speed
1MHz
Transistor Configuration
Single
Dimensiuni
15.8 x 5.2 x 22.74mm
Temperatura minima de lucru
-55 °C
Gate Capacitance
5100pF
Temperatura maxima de lucru
+175 °C
Energy Rating
160mJ
Tara de origine
China