Documente tehnice
Specificatii
Marca
onsemiMaximum Continuous Collector Current
200 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
1
Maximum Power Dissipation
375 W
Tip pachet
TO-247
Timp montare
Through Hole
Channel Type
P
Numar pini
4
Switching Speed
1MHz
Transistor Configuration
Single
Dimensiuni
15.8 x 5.2 x 22.74mm
Temperatura maxima de lucru
+175 °C
Energy Rating
160mJ
Temperatura minima de lucru
-55 °C
Gate Capacitance
5100pF
Tara de origine
China
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€ 5,97
Each (In a Tube of 450) (fara TVA)
€ 7,104
Each (In a Tube of 450) (cu TVA)
450
Documente tehnice
Specificatii
Marca
onsemiMaximum Continuous Collector Current
200 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
1
Maximum Power Dissipation
375 W
Tip pachet
TO-247
Timp montare
Through Hole
Channel Type
P
Numar pini
4
Switching Speed
1MHz
Transistor Configuration
Single
Dimensiuni
15.8 x 5.2 x 22.74mm
Temperatura maxima de lucru
+175 °C
Energy Rating
160mJ
Temperatura minima de lucru
-55 °C
Gate Capacitance
5100pF
Tara de origine
China