Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
830 mA
Maximum Drain Source Voltage
20 V
Tip pachet
SC-89-6
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
1.8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
625 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Temperatura maxima de lucru
+150 °C
Lungime
1.7mm
Number of Elements per Chip
2
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Latime
1.2mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Dimensiune celula
PowerTrench
Inaltime
0.6mm
Detalii produs
PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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Incercati din nou mai tarziu
€ 0,48
Buc. (Intr-un pachet de 25) (fara TVA)
€ 0,571
Buc. (Intr-un pachet de 25) (cu TVA)
25
€ 0,48
Buc. (Intr-un pachet de 25) (fara TVA)
€ 0,571
Buc. (Intr-un pachet de 25) (cu TVA)
25
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
25 - 75 | € 0,48 | € 12,00 |
100 - 475 | € 0,29 | € 7,25 |
500 - 975 | € 0,26 | € 6,50 |
1000 - 2975 | € 0,18 | € 4,50 |
3000+ | € 0,15 | € 3,75 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
830 mA
Maximum Drain Source Voltage
20 V
Tip pachet
SC-89-6
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
1.8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
625 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Temperatura maxima de lucru
+150 °C
Lungime
1.7mm
Number of Elements per Chip
2
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Latime
1.2mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Dimensiune celula
PowerTrench
Inaltime
0.6mm
Detalii produs
PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.