Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
76 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
4.67mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.36mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Inaltime
15.21mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.3V
Tara de origine
China
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 2,35
Buc. (Intr-un pachet de 2) (fara TVA)
€ 2,796
Buc. (Intr-un pachet de 2) (cu TVA)
2
€ 2,35
Buc. (Intr-un pachet de 2) (fara TVA)
€ 2,796
Buc. (Intr-un pachet de 2) (cu TVA)
2
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
2 - 8 | € 2,35 | € 4,70 |
10 - 98 | € 1,94 | € 3,88 |
100 - 248 | € 1,56 | € 3,12 |
250 - 498 | € 1,46 | € 2,92 |
500+ | € 1,38 | € 2,76 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
76 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
4.67mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.36mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Inaltime
15.21mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.3V
Tara de origine
China