Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
124 A
Maximum Drain Source Voltage
100 V
Tip pachet
PQFN8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
12 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
5mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.85mm
Typical Gate Charge @ Vgs
42 nC @ 10 V
Inaltime
1.05mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.3V
Tara de origine
Philippines
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 2,79
Buc. (Intr-un pachet de 5) (fara TVA)
€ 3,32
Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 2,79
Buc. (Intr-un pachet de 5) (fara TVA)
€ 3,32
Buc. (Intr-un pachet de 5) (cu TVA)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 5 | € 2,79 | € 13,95 |
10 - 95 | € 2,18 | € 10,90 |
100 - 245 | € 1,84 | € 9,20 |
250 - 495 | € 1,78 | € 8,90 |
500+ | € 1,64 | € 8,20 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
124 A
Maximum Drain Source Voltage
100 V
Tip pachet
PQFN8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
12 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
5mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.85mm
Typical Gate Charge @ Vgs
42 nC @ 10 V
Inaltime
1.05mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.3V
Tara de origine
Philippines