Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
116 A
Maximum Drain Source Voltage
80 V
Tip pachet
PQFN8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
7.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
113.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Lungime
5.85mm
Typical Gate Charge @ Vgs
51 nC @ 10 V
Latime
5mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Inaltime
1.05mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.3V
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Buc. (Pe o rola de 3000) (cu TVA)
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Buc. (Pe o rola de 3000) (fara TVA)
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Buc. (Pe o rola de 3000) (cu TVA)
3000
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
116 A
Maximum Drain Source Voltage
80 V
Tip pachet
PQFN8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
7.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
113.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Lungime
5.85mm
Typical Gate Charge @ Vgs
51 nC @ 10 V
Latime
5mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Inaltime
1.05mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.3V