Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
57 A
Maximum Drain Source Voltage
100 V
Tip pachet
PQFN8
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
3.4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.4mm
Typical Gate Charge @ Vgs
21 nC @ 10 V
Inaltime
0.75mm
Dimensiune celula
PowerTrench
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V
Detalii produs
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,92
Buc. (Pe o rola de 3000) (fara TVA)
€ 1,095
Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 0,92
Buc. (Pe o rola de 3000) (fara TVA)
€ 1,095
Buc. (Pe o rola de 3000) (cu TVA)
3000
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
57 A
Maximum Drain Source Voltage
100 V
Tip pachet
PQFN8
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
3.4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.4mm
Typical Gate Charge @ Vgs
21 nC @ 10 V
Inaltime
0.75mm
Dimensiune celula
PowerTrench
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V
Detalii produs