Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
40 V
Tip pachet
MicroFET 2 x 2
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
19 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W, 900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Latime
2mm
Transistor Material
Si
Dimensiune celula
PowerTrench
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.75mm
Detalii produs
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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Incercati din nou mai tarziu
€ 0,89
Buc. (Intr-un pachet de 10) (fara TVA)
€ 1,059
Buc. (Intr-un pachet de 10) (cu TVA)
10
€ 0,89
Buc. (Intr-un pachet de 10) (fara TVA)
€ 1,059
Buc. (Intr-un pachet de 10) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 40 | € 0,89 | € 8,90 |
50 - 90 | € 0,83 | € 8,30 |
100 - 240 | € 0,80 | € 8,00 |
250 - 490 | € 0,77 | € 7,70 |
500+ | € 0,75 | € 7,50 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
40 V
Tip pachet
MicroFET 2 x 2
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
19 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W, 900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Latime
2mm
Transistor Material
Si
Dimensiune celula
PowerTrench
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.75mm
Detalii produs
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.