Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-363
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
259 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
300 mW, 360 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Latime
1.25mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
2mm
Typical Gate Charge @ Vgs
1.8 nC @ 4.5 V
Inaltime
1mm
Dimensiune celula
PowerTrench
Temperatura minima de lucru
-55 °C
Detalii produs
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,26
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,309
Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 0,26
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,309
Buc. (Pe o rola de 3000) (cu TVA)
3000
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-363
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
259 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
300 mW, 360 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Latime
1.25mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
2mm
Typical Gate Charge @ Vgs
1.8 nC @ 4.5 V
Inaltime
1mm
Dimensiune celula
PowerTrench
Temperatura minima de lucru
-55 °C
Detalii produs
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.