Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Dimensiune celula
PowerTrench
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
128 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
960 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
3.5 nC @ 4.5 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Latime
1.7mm
Transistor Material
Si
Inaltime
1mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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Incercati din nou mai tarziu
€ 0,57
Buc. (Livrat pe rola) (fara TVA)
€ 0,678
Buc. (Livrat pe rola) (cu TVA)
10
€ 0,57
Buc. (Livrat pe rola) (fara TVA)
€ 0,678
Buc. (Livrat pe rola) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
10 - 90 | € 0,57 | € 5,70 |
100 - 490 | € 0,42 | € 4,20 |
500 - 990 | € 0,33 | € 3,30 |
1000 - 2990 | € 0,27 | € 2,70 |
3000+ | € 0,23 | € 2,30 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Dimensiune celula
PowerTrench
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
128 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
960 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
3.5 nC @ 4.5 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Latime
1.7mm
Transistor Material
Si
Inaltime
1mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.