Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
240 A
Maximum Drain Source Voltage
100 V
Tip pachet
H-PSOF8L
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
4.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
11.78mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
9.9mm
Typical Gate Charge @ Vgs
47 nC @ 10 V
Inaltime
2.4mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.25V
Tara de origine
Philippines
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,76
Buc. (Pe o rola de 2000) (fara TVA)
€ 2,094
Buc. (Pe o rola de 2000) (cu TVA)
2000
€ 1,76
Buc. (Pe o rola de 2000) (fara TVA)
€ 2,094
Buc. (Pe o rola de 2000) (cu TVA)
2000
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
240 A
Maximum Drain Source Voltage
100 V
Tip pachet
H-PSOF8L
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
4.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
11.78mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
9.9mm
Typical Gate Charge @ Vgs
47 nC @ 10 V
Inaltime
2.4mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.25V
Tara de origine
Philippines