Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
44 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO-220F
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
67 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Latime
4.9mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.36mm
Typical Gate Charge @ Vgs
78 nC @ 10 V
Inaltime
16.07mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
China
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 4,04
Each (In a Tube of 1000) (fara TVA)
€ 4,808
Each (In a Tube of 1000) (cu TVA)
1000
€ 4,04
Each (In a Tube of 1000) (fara TVA)
€ 4,808
Each (In a Tube of 1000) (cu TVA)
1000
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
44 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO-220F
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
67 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Latime
4.9mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.36mm
Typical Gate Charge @ Vgs
78 nC @ 10 V
Inaltime
16.07mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
China