Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
144 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Latime
4.7mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.67mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Inaltime
16.3mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
China
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 2,19
Each (In a Tube of 800) (fara TVA)
€ 2,606
Each (In a Tube of 800) (cu TVA)
800
€ 2,19
Each (In a Tube of 800) (fara TVA)
€ 2,606
Each (In a Tube of 800) (cu TVA)
800
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
800 - 800 | € 2,19 | € 1.752,00 |
1600 - 2400 | € 1,80 | € 1.440,00 |
3200 - 4800 | € 1,74 | € 1.392,00 |
5600+ | € 1,66 | € 1.328,00 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
144 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Latime
4.7mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.67mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Inaltime
16.3mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
China