Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
154 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Typical Gate Charge @ Vgs
39 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Lungime
10.67mm
Latime
4.7mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Inaltime
16.3mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 2,05
Each (In a Tube of 50) (fara TVA)
€ 2,44
Each (In a Tube of 50) (cu TVA)
50
€ 2,05
Each (In a Tube of 50) (fara TVA)
€ 2,44
Each (In a Tube of 50) (cu TVA)
50
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
154 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Typical Gate Charge @ Vgs
39 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Lungime
10.67mm
Latime
4.7mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Inaltime
16.3mm
Temperatura minima de lucru
-55 °C
Tara de origine
China