Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
650 V
Tip pachet
PQFN4
Timp montare
Surface Mount
Numar pini
4
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Temperatura maxima de lucru
+150 °C
Lungime
8mm
Typical Gate Charge @ Vgs
18 nC @ 10 V
Latime
8mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Inaltime
1.05mm
Temperatura minima de lucru
-55 °C
Informatii indisponibile despre stoc
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Buc. (Pe o rola de 3000) (fara TVA)
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Buc. (Pe o rola de 3000) (cu TVA)
3000
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
650 V
Tip pachet
PQFN4
Timp montare
Surface Mount
Numar pini
4
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Temperatura maxima de lucru
+150 °C
Lungime
8mm
Typical Gate Charge @ Vgs
18 nC @ 10 V
Latime
8mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Inaltime
1.05mm
Temperatura minima de lucru
-55 °C