Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
650 V
Dimensiune celula
FCH040N65S3
Tip pachet
TO-247
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
417 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Latime
4.82mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
15.87mm
Typical Gate Charge @ Vgs
136 nC @ 10 V
Inaltime
20.82mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
China
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€ 9,59
Each (In a Tube of 450) (fara TVA)
€ 11,412
Each (In a Tube of 450) (cu TVA)
450
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
650 V
Dimensiune celula
FCH040N65S3
Tip pachet
TO-247
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
417 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Latime
4.82mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
15.87mm
Typical Gate Charge @ Vgs
136 nC @ 10 V
Inaltime
20.82mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
China