Documente tehnice
Specificatii
Marca
onsemiDirection Type
Bi-Directional
Diode Configuration
Single
Maximum Clamping Voltage
6V
Minimum Breakdown Voltage
5.1V
Montare
Surface Mount
Tip pachet
X2DFN
Maximum Reverse Stand-off Voltage
5V
Numar pini
2
Maximum Peak Pulse Current
9.9A
ESD protection
Yes
Number of Elements per Chip
1
Frecventa minima de auto-rezonanta
-55 °C
Dimensiuni
1 x 0.6 x 0.35mm
Temperatura maxima de lucru
+150 °C
Inaltime
0.35mm
Latime
0.6mm
Test Current
1mA
Maximum Reverse Leakage Current
100nA
Capacitate
21pF
Lungime
1mm
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P.O.A.
8000
P.O.A.
8000
Documente tehnice
Specificatii
Marca
onsemiDirection Type
Bi-Directional
Diode Configuration
Single
Maximum Clamping Voltage
6V
Minimum Breakdown Voltage
5.1V
Montare
Surface Mount
Tip pachet
X2DFN
Maximum Reverse Stand-off Voltage
5V
Numar pini
2
Maximum Peak Pulse Current
9.9A
ESD protection
Yes
Number of Elements per Chip
1
Frecventa minima de auto-rezonanta
-55 °C
Dimensiuni
1 x 0.6 x 0.35mm
Temperatura maxima de lucru
+150 °C
Inaltime
0.35mm
Latime
0.6mm
Test Current
1mA
Maximum Reverse Leakage Current
100nA
Capacitate
21pF
Lungime
1mm