Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
20 to 40mA
Maximum Drain Source Voltage
25 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Common Source
Configuration
Dual
Montare
Surface Mount
Tip pachet
CPH
Numar pini
6
Drain Gate On-Capacitance
6pF
Source Gate On-Capacitance
2.3pF
Dimensiuni
2.9 x 1.6 x 0.9mm
Inaltime
0.9mm
Latime
1.6mm
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Tara de origine
China
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Incercati din nou mai tarziu
€ 0,24
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,286
Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 0,24
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,286
Buc. (Pe o rola de 3000) (cu TVA)
3000
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
20 to 40mA
Maximum Drain Source Voltage
25 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Common Source
Configuration
Dual
Montare
Surface Mount
Tip pachet
CPH
Numar pini
6
Drain Gate On-Capacitance
6pF
Source Gate On-Capacitance
2.3pF
Dimensiuni
2.9 x 1.6 x 0.9mm
Inaltime
0.9mm
Latime
1.6mm
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Tara de origine
China
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.