Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
100 V
Tip pachet
CPH
Timp montare
Surface Mount
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
380 MHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
2.9 x 1.6 x 0.9mm
Detalii produs
General Purpose NPN Transistors, Over 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
P.O.A.
Buc. (Intr-un pachet de 20) (fara TVA)
Standard
20
P.O.A.
Buc. (Intr-un pachet de 20) (fara TVA)
Informatii despre stoc temporar indisponibile
Standard
20
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
100 V
Tip pachet
CPH
Timp montare
Surface Mount
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
380 MHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
2.9 x 1.6 x 0.9mm
Detalii produs
General Purpose NPN Transistors, Over 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.


