Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
130 mA
Maximum Drain Source Voltage
50 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
225 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Lungime
3.04mm
Typical Gate Charge @ Vgs
2.2 nC @ 10 V
Latime
1.4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Inaltime
1.01mm
Automotive Standard
AEC-Q101
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
2.2V
Tara de origine
China
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,09
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,107
Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 0,09
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,107
Buc. (Pe o rola de 3000) (cu TVA)
3000
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
3000 - 6000 | € 0,09 | € 270,00 |
9000 - 42000 | € 0,07 | € 210,00 |
45000 - 96000 | € 0,07 | € 210,00 |
99000+ | € 0,06 | € 180,00 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
130 mA
Maximum Drain Source Voltage
50 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
225 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Lungime
3.04mm
Typical Gate Charge @ Vgs
2.2 nC @ 10 V
Latime
1.4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Inaltime
1.01mm
Automotive Standard
AEC-Q101
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
2.2V
Tara de origine
China