Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
130 mA
Maximum Drain Source Voltage
50 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
225 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.3mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
2.9mm
Inaltime
0.94mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,06
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,071
Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 0,06
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,071
Buc. (Pe o rola de 3000) (cu TVA)
3000
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
3000 - 3000 | € 0,06 | € 180,00 |
6000+ | € 0,05 | € 150,00 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
130 mA
Maximum Drain Source Voltage
50 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
225 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.3mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
2.9mm
Inaltime
0.94mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs