Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
130 mA
Maximum Drain Source Voltage
50 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
225 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Latime
1.3mm
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.94mm
Detalii produs
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,10
Buc. (Intr-un pachet de 100) (fara TVA)
€ 0,119
Buc. (Intr-un pachet de 100) (cu TVA)
100
€ 0,10
Buc. (Intr-un pachet de 100) (fara TVA)
€ 0,119
Buc. (Intr-un pachet de 100) (cu TVA)
100
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
100 - 100 | € 0,10 | € 10,00 |
200 - 400 | € 0,09 | € 9,00 |
500 - 900 | € 0,09 | € 9,00 |
1000 - 1900 | € 0,06 | € 6,00 |
2000+ | € 0,06 | € 6,00 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
130 mA
Maximum Drain Source Voltage
50 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
225 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Latime
1.3mm
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.94mm
Detalii produs