Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
50 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
225 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Latime
1.3mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.94mm
Detalii produs
N-Channel Power MOSFET, 50V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,25
Buc. (Livrat pe rola) (fara TVA)
€ 0,298
Buc. (Livrat pe rola) (cu TVA)
25
€ 0,25
Buc. (Livrat pe rola) (fara TVA)
€ 0,298
Buc. (Livrat pe rola) (cu TVA)
25
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
25 - 225 | € 0,25 | € 6,25 |
250 - 1225 | € 0,06 | € 1,50 |
1250 - 2475 | € 0,06 | € 1,50 |
2500 - 12475 | € 0,06 | € 1,50 |
12500+ | € 0,06 | € 1,50 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
50 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
225 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Latime
1.3mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.94mm
Detalii produs