Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
170 mA
Maximum Drain Source Voltage
100 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Maximum Power Dissipation
225 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Latime
1.3mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
0.94mm
Detalii produs
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,25
Buc. (Intr-un pachet de 10) (fara TVA)
€ 0,298
Buc. (Intr-un pachet de 10) (cu TVA)
10
€ 0,25
Buc. (Intr-un pachet de 10) (fara TVA)
€ 0,298
Buc. (Intr-un pachet de 10) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 90 | € 0,25 | € 2,50 |
100+ | € 0,23 | € 2,30 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
170 mA
Maximum Drain Source Voltage
100 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Maximum Power Dissipation
225 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Latime
1.3mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
0.94mm
Detalii produs