Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
8 to 80mA
Maximum Drain Source Voltage
0.4 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Configuration
Single
Transistor Configuration
Single
Timp montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Dimensiuni
2.9 x 1.3 x 0.97mm
Lungime
2.9mm
Temperatura maxima de lucru
+150 °C
Latime
1.3mm
Inaltime
0.97mm
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 60,00
€ 0,12 Buc. (Livrat pe rola) (fara TVA)
€ 72,60
€ 0,145 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
500
€ 60,00
€ 0,12 Buc. (Livrat pe rola) (fara TVA)
€ 72,60
€ 0,145 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
500
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Rola |
|---|---|---|
| 500 - 900 | € 0,12 | € 12,00 |
| 1000+ | € 0,11 | € 11,00 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
8 to 80mA
Maximum Drain Source Voltage
0.4 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Configuration
Single
Transistor Configuration
Single
Timp montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Dimensiuni
2.9 x 1.3 x 0.97mm
Lungime
2.9mm
Temperatura maxima de lucru
+150 °C
Latime
1.3mm
Inaltime
0.97mm
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


