Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
100 V
Tip pachet
TO-218
Montare
Through Hole
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
10.53 x 4.83 x 15.75mm
Tara de origine
China
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P.O.A.
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P.O.A.
30
Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
100 V
Tip pachet
TO-218
Montare
Through Hole
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
10.53 x 4.83 x 15.75mm
Tara de origine
China