Documente tehnice
Specificatii
Marca
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
-4 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
-5 V
Tip pachet
TO-126
Montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
750
Maximum Collector Base Voltage
-100 V
Maximum Collector Emitter Saturation Voltage
-2.5 V
Maximum Collector Cut-off Current
-500µA
Maximum Power Dissipation
14 W
Temperatura maxima de lucru
+150 °C
Lungime
8mm
Inaltime
11mm
Latime
3.25mm
Dimensiuni
8 x 3.25 x 11mm
Detalii produs
Darlington PNP Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
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P.O.A.
Standard
20
P.O.A.
Standard
20
Documente tehnice
Specificatii
Marca
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
-4 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
-5 V
Tip pachet
TO-126
Montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
750
Maximum Collector Base Voltage
-100 V
Maximum Collector Emitter Saturation Voltage
-2.5 V
Maximum Collector Cut-off Current
-500µA
Maximum Power Dissipation
14 W
Temperatura maxima de lucru
+150 °C
Lungime
8mm
Inaltime
11mm
Latime
3.25mm
Dimensiuni
8 x 3.25 x 11mm
Detalii produs
Darlington PNP Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.