Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
115 V
Tip pachet
TO-220
Montare
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
5 V
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
9.9 x 4.5 x 15.7mm
Detalii produs
Power NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
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Incercati din nou mai tarziu
€ 0,99
Each (In a Tube of 50) (fara TVA)
€ 1,178
Each (In a Tube of 50) (cu TVA)
50
€ 0,99
Each (In a Tube of 50) (fara TVA)
€ 1,178
Each (In a Tube of 50) (cu TVA)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 50 | € 0,99 | € 49,50 |
100 - 200 | € 0,89 | € 44,50 |
250+ | € 0,85 | € 42,50 |
Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
115 V
Tip pachet
TO-220
Montare
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
5 V
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
9.9 x 4.5 x 15.7mm
Detalii produs
Power NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.