Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
14.5 to 24mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Configuration
Single
Transistor Configuration
Single
Timp montare
Surface Mount
Tip pachet
CP
Numar pini
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
3pF
Dimensiuni
2.9 x 1.5 x 1.1mm
Latime
1.5mm
Inaltime
1.1mm
Lungime
2.9mm
Temperatura maxima de lucru
+150 °C
Tara de origine
China
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 32,00
€ 0,32 Buc. (Livrat pe rola) (fara TVA)
€ 38,72
€ 0,387 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
100
€ 32,00
€ 0,32 Buc. (Livrat pe rola) (fara TVA)
€ 38,72
€ 0,387 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
100
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Rola | 
|---|---|---|
| 100 - 225 | € 0,32 | € 8,00 | 
| 250 - 475 | € 0,28 | € 7,00 | 
| 500 - 975 | € 0,24 | € 6,00 | 
| 1000+ | € 0,22 | € 5,50 | 
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
14.5 to 24mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Configuration
Single
Transistor Configuration
Single
Timp montare
Surface Mount
Tip pachet
CP
Numar pini
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
3pF
Dimensiuni
2.9 x 1.5 x 1.1mm
Latime
1.5mm
Inaltime
1.1mm
Lungime
2.9mm
Temperatura maxima de lucru
+150 °C
Tara de origine
China
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


